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| STB270N04 STB270N04-1 - STP270N04 N-CHANNEL 40V - 2.1m - 160A - TO-220 - D2PAK - I2PAK STripFETTM Power MOSFET General features Type STB270N04-1 STB270N04 STP270N04 VDSS 40V 40V 40V RDS(on) <2.9m <2.5m <2.9m ID 120A 160A 120A PTOT 330W 330W 330W TO-220 1 2 3 3 12 IPAK 100% avalanche tested Standard threshold drive 1 3 Description This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique "Single Feature SizeTM" strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. DPAK Internal schematic diagram Applications High current, switching application Automotive Order codes Sales Type STB270N04-1 STB270N04 STP270N04 Marking B270N04 B270N04 P270N04 Package IPAK DPAK TO-220 Packaging TUBE TAPE & REEL TUBE February 2006 Rev3 1/14 www.st.com 14 Electrical ratings STB270N04-1 - STB270N04 - STP270N04 1 Electrical ratings Table 1. Symbol VDS VGS ID(1) ID(1) IDM (2) Absolute maximum ratings Value Parameter TO-220/IPAK Drain-Source Voltage (V GS = 0) Gate-Source Voltage Drain Current (continuous) at T C = 25C Drain Current (continuous) at T C=100C Drain Current (pulsed) Total Dissipation at T C = 25C Derating Factor 120 120 480 330 2.2 3.5 1 -55 to 175 40 20 160 160 640 DPAK V V A A A W W/C V/ns J C Unit PTOT dv/dt(3) EAS(4) TJ Tstg Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage Temperature 1. Current limited by package 2. Pulse width limited by safe operating area 3. ISD 120A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX 4. Starting Tj=25C, Id =80A, Vdd=32V Table 2. Symbol Rthj-case Rthj-pcb(1) Rthj-a Tl Thermal data Value Parameter TO-220/IPAK Thermal resistance junction-case Max Thermal resistance Junction-pcb Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose (for 10 sec, 1.6mm from case) -62.5 300 0.45 35 --DPAK C/W C/W C/W C Unit 1. When mounted on 1inch FR-4 board, 2 oz Cu. 2/14 Rev3 STB270N04-1 - STB270N04 - STP270N04 Electrical characteristics 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 3. Symbol V(BR)DSS On/off states Parameter Drain-Source Breakdown Voltage Test Condictions ID = 250A, VGS= 0 Min. 40 10 100 Typ. Max. Unit V A A IDSS VDS = Max Rating, Zero Gate Voltage Drain VDS = MaxRating Current (VGS = 0) @125C Gate Body Leakage Current (VDS = 0) VGS = 20V 2 TO-220 IPAK DPAK 2.5 2.1 IGSS VGS(th) 200 nA Gate Threshold Voltage VDS= VGS, ID = 250A Static Drain-Source On Resistance 4 2.9 2.5 V m m RDS(on) VGS= 10V, ID= 80A Table 4. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Condictions VDS =15V, ID = 80A Min. Typ. 200 7400 1800 47 110 27 25 150 Max. Unit S pF pF pF nC nC nC VDS =25V, f=1 MHz, VGS=0 VDD=20V, ID = 160A VGS =10V (see Figure 2) 1. Pulsed: pulse duration=300s, duty cycle 1.5% Rev3 3/14 Electrical characteristics STB270N04-1 - STB270N04 - STP270N04 Table 5. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on Delay Time Rise Time Test Condictions VDD =20 V, ID= 80A, RG=4.7, VGS=10V (see Figure 14) VDD =20 V, ID= 80A, RG=4.7, VGS=10V (see Figure 14) Min. Typ. 22 180 Max. Unit ns ns Turn-off Delay Time Fall Time 110 45 ns ns Table 6. Symbol Source drain diode Parameter DPAK Test Condictions Min Typ. Max 160 120 640 480 ISD=80A, VGS=0 ISD=160A, di/dt = 100A/s, VDD=32V, Tj=150C 70 225 3.2 1.5 Unit A A A A V ns nC A ISD Source-drain Current TO-220 IPAK DPAK ISDM(1) VSD(2) trr Qrr IRRM Source-drain Current (pulsed) Forward on Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current TO-220 IPAK 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% 4/14 Rev3 STB270N04-1 - STB270N04 - STP270N04 Electrical characteristics 2.1 Figure 1. Electrical characteristics (curves) Safe operating area Figure 2. Thermal impedance Figure 3. Output characterisics Figure 4. Transfer characteristics Figure 5. Static drain-source on resistance Figure 6. Normalized BVDSS vs temperature Rev3 5/14 Electrical characteristics Figure 7. STB270N04-1 - STB270N04 - STP270N04 Capacitance variations Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 10. Normalized on resistance vs temperature Figure 11. Source-drain diode forward characteristics 6/14 Rev3 STB270N04-1 - STB270N04 - STP270N04 Test circuit 3 Test circuit Figure 13. Gate charge test circuit Figure 12. Switching times test circuit for resistive load Figure 14. Test circuit for inductive load Figure 15. Unclamped Inductive load test switching and diode recovery times circuit Figure 16. Unclamped inductive waveform Figure 17. Switching time waveform Rev3 7/14 Package mechanical data STB270N04-1 - STB270N04 - STP270N04 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/14 Rev3 STB270N04-1 - STB270N04 - STP270N04 Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q Rev3 9/14 Package mechanical data STB270N04-1 - STB270N04 - STP270N04 TO-262 (I2PAK) MECHANICAL DATA mm. DIM. MIN. A A1 b b1 c c2 D e e1 E L L1 L2 4.40 2.40 0.61 1.14 0.49 1.23 8.95 2.40 4.95 10 13 3.50 1.27 TYP MAX. 4.60 2.72 0.88 1.70 0.70 1.32 9.35 2.70 5.15 10.40 14 3.93 1.40 MIN. 0.173 0.094 0.024 0.044 0.019 0.048 0.352 0.094 0.194 0.393 0.511 0.137 0.050 TYP. MAX. 0.181 0.107 0.034 0.066 0.027 0.052 0.368 0.106 0.202 0.410 0.551 0.154 0.055 inch 10/14 Rev3 STB270N04-1 - STB270N04 - STP270N04 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 Rev3 11/14 Packaging mechanical data STB270N04-1 - STB270N04 - STP270N04 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 12/14 Rev3 STB270N04-1 - STB270N04 - STP270N04 Revision history 6 Revision history Table 7. Date 07-Oct-2005 10-Nov-2005 09-Feb-2006 Document revision history Revision 1 2 3 Initial release. Preliminary version Complete datasheet Changes Rev3 13/14 STB270N04-1 - STB270N04 - STP270N04 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 Rev3 |
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